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1. product pro?le 1.1 general description symmetrical n-channel silicon junction ?eld-effect transistors in a sot23 package. 1.2 features n low noise n interchangeability of drain and source connections n high gain. 1.3 applications n am input stage in car radios n vhf ampli?ers n oscillators and mixers. 1.4 quick reference data pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors rev. 03 23 july 2004 product data sheet caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. msc895 table 1: quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - 25 v v gsoff gate-source cut-off voltage pmbfj308 v ds = 10 v; i d =1 m a - 1- - 6.5 v pmbfj309 v ds = 10 v; i d =1 m a - 1- - 4v pmbfj310 v ds = 10 v; i d =1 m a - 2- - 6.5 v i dss drain current pmbfj308 v gs =0v; v ds = 10 v 12 - 60 ma pmbfj309 v gs =0v; v ds = 10 v 12 - 30 ma pmbfj310 v gs =0v; v ds = 10 v 24 - 60 ma p tot total power dissipation up to t amb =25 c - - 250 mw ? y fs ? forward transfer admittance v ds = 10 v; i d =10ma 10 - - ms
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 2 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 2. pinning information [1] drain and source are interchangeable. 3. ordering information 4. marking [1] * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. 5. limiting values table 2: discrete pinning [1] pin description simpli?ed outline symbol 1 source 2 drain 3 gate sot23 12 3 sym060 2 1 3 table 3: ordering information type number package name description version pmbfj308 - plastic surface mounted package; 3 leads sot23 pmbfj309 pmbfj310 table 4: marking type number marking code [1] pmbfj308 48* pmbfj309 49* pmbfj310 50* table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) - 25 v v gso gate-source voltage open drain - - 25 v v gdo gate-drain voltage open source - - 25 v i g forward gate current (dc) - 50 ma
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 3 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 6. thermal characteristics [1] device mounted on an fr4 printed-circuit board. 7. static characteristics p tot total power dissipation up to t amb =25 c - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. power derating curve. table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) 0 200 150 50 100 mbb688 200 100 300 400 p tot (mw) 0 table 6: thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient [1] 500 k/w table 7: static characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)gss gate-source breakdown voltage i g = - 1 m a; v ds =0v - 25 - - v v gsoff gate-source cut-off voltage v pmbfj308 i d =1 m a; v ds =10v - 1- - 6.5 v pmbfj309 i d =1 m a; v ds =10v - 1- - 4v pmbfj310 i d =1 m a; v ds =10v - 2- - 6.5 v v gss gate-source forward voltage i g = 1 ma; v ds =0v - - 1 v
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 4 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 8. dynamic characteristics i dss drain-source leakage current pmbfj308 v gs =0v; v ds =10v 12 - 60 ma pmbfj309 v gs =0v; v ds =10v 12 - 30 ma pmbfj310 v gs =0v; v ds =10v 24 - 60 ma i gss gate-source leakage current v gs = - 15 v; v ds =0v - - - 1na r dson drain-source on-state resistance v gs =0v; v ds = 100 mv - 50 - w ? y fs ? forward transfer admittance i d = 10 ma; v ds =10v 10 - - ms ? y os ? common source output admittance i d = 10 ma; v ds =10v - - 250 m s table 7: static characteristics continued t j =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit table 8: dynamic characteristics t j = 25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit c iss input capacitance v ds =10v v gs = - 10 v; f = 1 mhz - 3 5 pf v gs =0v; t amb =25 c-6-pf c rss reverse transfer capacitance v ds =0v; v gs = - 10 v; f = 1 mhz - 1.3 2.5 pf g is input conductance v ds =10v; i d =10ma f = 100 mhz - 200 - m s f = 450 mhz - 3 - ms g fs transfer conductance v ds =10v; i d =10ma f = 100 mhz - 13 - ms f = 450 mhz - 12 - ms g rs reverse conductance v ds =10v; i d =10ma f = 100 mhz - - 30 - m s f = 450 mhz - - 450 - m s g os output conductance v ds =10v; i d =10ma f = 100 mhz - 150 - m s f = 450 mhz - 400 - m s v n equivalent input noise voltage v ds =10v; i d = 10 ma; f = 100 hz - 6 - nv/ ? hz
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 5 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors v ds = 10 v; t j =25 c. v ds =10v; i d = 10 ma; t j =25 c. fig 2. drain current as a function of gate-source cut-off voltage; typical values. fig 3. forward transfer admittance as a function of gate-source cut-off voltage; typical values. v ds = 10 v; i d = 10 ma; t j =25 c. v ds = 100 mv; v gs = 0 v; t j =25 c. fig 4. common-source output conductance as a function of gate-source cut-off voltage; typical values. fig 5. drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. v gsoff (v) 0 - 4 - 3 - 1 - 2 mcd220 20 30 10 40 50 i dss (ma) 0 0 - 2 - 4 - 8 mcd219 - 6 20 0 16 12 8 y fs (ms) 4 v gsoff (v) 0 150 100 50 0 - 1 - 2 - 4 mcd221 - 3 g os ( m s) v gsoff (v) 0 - 1 - 2 - 4 80 60 20 0 40 mcd222 - 3 r dson ( w ) v gsoff (v)
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 6 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors t j =25 c. (1) v gs = 0 v. (2) v gs = - 0.25 v. (3) v gs = - 0.5 v. (4) v gs = - 0.75 v. (5) v gs = - 1 v. v ds =10v; t j =25 c. fig 6. typical output characteristics; pmbfj308. fig 7. typical transfer characteristics; pmbfj308. t j =25 c. (1) v gs = 0 v. (2) v gs = - 0.25 v. (3) v gs = - 0.5 v. (4) v gs = - 0.75 v. (5) v gs = - 1 v. v ds =10v; t j =25 c. fig 8. typical output characteristics; pmbfj309. fig 9. typical transfer characteristics; pmbfj309. v ds (v) 016 12 48 mcd216 8 4 12 16 i d (ma) 0 (3) (1) (2) (5) (4) v gs (v) - 20 - 0.5 - 1.5 - 1 mcd213 8 4 12 16 i d (ma) 0 v ds (v) 016 12 48 mcd218 8 12 4 16 20 i d (ma) 0 (1) (3) (5) (4) (2) v gs (v) - 20 - 0.5 - 1.5 - 1 mcd215 8 12 4 16 20 i d (ma) 0
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 7 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors t j =25 c. (1) v gs = 0 v. (2) v gs = - 0.5 v. (3) v gs = - 1 v. (4) v gs = - 1.5 v. (5) v gs = - 2 v. (6) v gs = - 2.5 v. v ds =10v; t j =25 c. fig 10. typical output characteristics; pmbfj310. fig 11. typical transfer characteristics; pmbfj310. v ds = 10 v; t j =25 c. v ds =10v; t j =25 c. fig 12. reverse transfer capacitance as a function of gate-source voltage; typical values. fig 13. input capacitance as a function of gate-source voltage; typical values. v ds (v) 016 12 48 mcd217 20 10 30 40 i d (ma) 0 (2) (4) (1) (5) (6) (3) - 4 - 3 - 20 40 30 10 0 20 mcd214 - 1 i d (ma) v gs (v) - 10 - 40 4 3 1 0 2 mcd224 - 8 - 6 - 2 c rs (pf) v gs (v) - 10 0 10 0 mcd223 - 8 - 6 - 4 - 2 8 6 4 2 c is (pf) v gs (v)
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 8 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors v ds = 10 v; t j =25 c. fig 14. drain current as a function of gate-source voltage; typical values. t j =25 c. (1) i d = 10 ma. (2) i d = 1 ma. (3) i d = 100 m a. (4) i gss . fig 15. gate current as a function of drain-gate voltage; typical values. mcd229 1 10 - 2 10 - 1 10 2 10 10 3 i d ( m a) 10 - 3 v gs (v) - 2.5 0 - 0.5 - 1.5 - 1.0 - 2.0 mcd230 - 10 - 1 - 10 3 - 10 2 - 10 4 i gss (pa) - 10 - 1 v dg (v) 0 16 12 48 (1) (2) (3) (4)
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 9 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors fig 16. gate current as a function of junction temperature; typical values. v ds = 10 v; i d = 10 ma; t amb =25 c. v ds =10v; i d = 10 ma; t amb =25 c. fig 17. input admittance; typical values. fig 18. forward transfer admittance; typical values. mcd231 10 1 10 3 10 2 10 4 i gss (pa) 10 - 1 t j ( c) - 25 175 125 25 75 mcd228 10 1 g is , b is (ms) 10 - 1 10 2 f (mhz) 10 10 3 10 2 b is g is f (mhz) 10 10 3 10 2 mcd227 10 10 2 g fs , - b fs (ms) 1 g fs - b fs
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 10 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors v ds = 10 v; i d = 10 ma; t amb =25 c. v ds =10v; i d = 10 ma; t amb =25 c. fig 19. reverse transfer admittance; typical values. fig 20. output admittance; typical values. mcd226 f (mhz) 10 10 3 10 2 - 10 - 1 - 1 - 10 - 10 2 b rs , g rs (ms) - 10 - 2 b rs g rs mcd225 10 1 b os , g os (ms) 10 - 1 10 2 f (mhz) 10 10 3 10 2 b os g os
9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 11 of 14 philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 9. package outline fig 21. package outline. unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 12 of 14 10. revision history table 9: revision history document id release date data sheet status change notice order number supersedes pmbfj308_309_310_3 20040723 product data sheet - 9397 750 13403 pmbfj308_309_310_2 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? t ab le 4 mar king : added new marking codes. pmbfj308_309_310_2 19960911 product speci?cation - 9397 750 01141 -
philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 9397 750 13403 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 03 23 july 2004 13 of 14 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 23 july 2004 document order number: 9397 750 13403 published in the netherlands philips semiconductors pmbfj308; pmbfj309; pmbfj310 n-channel silicon ?eld-effect transistors 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 3 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 4 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 contact information . . . . . . . . . . . . . . . . . . . . 13

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